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Listing of works with the partition by the subject of reports. Click on the work title to see its details. The selected set may be restricted by specifying a range of conference years, or by selecting a specific topic.

Select: from 2005 2006 2008 2010 2012 2014 2016 2018 2020 2021 2022 2023 2024 to 2005 2006 2008 2010 2012 2014 2016 2018 2020 2021 2022 2023 2024 year

All topics ADC design problems Cellular automata Design of System-on-chip (SoC) and IP-blocks Design of VLSI elements Design of VLSI signal processors Design of analog and mixed functional blocks of VLSI Design of digital functional blocks of VLSI Design of fault-tolerance systems Design of micro-electromechanical systems Design of nanoelectronic devices Design of nanoelectronic devices based on Josephson junctions Design of photodetecting VLSI Design of radiation-resistant VLSI Design of technological processes Designing components for aerospace and navigation technology Genetic algorithms in VLSI CAD Methods and algorithms for automated layout design Methods for high-level simulation Methods of device technology simulation of VLSI Methods of digital information processing and digital filters Methods of electro-thermal simulation Methods of logic synthesis and functional logic simulation ... Methods of simulation of VLSI electrical characteristics Models of devices for circuit simulation Neural networks Problems of development of sensory microcircuitry Simulation of data transfer channels Study of the magnetic properties of materials Unconventional computing systems Web-based VLSI CAD design of memory cells

Selection on topic: Models of devices for circuit simulation

Selected papers: from 2005 to 2024 year

In selection - 50 papers

A

C

D

F

H

I

M

N

P

R

S

T

U

A
	Accuracy Improvement of the Interconnect Parasitic Capacitance Extraction Analysis of Trends in the Development of Field-Effect Transistors An universal algorithm for amplifier oriented linear GaAs pHEMT Application of the template model for approximation of differential characteristics of complementary JFETs
C
	Calculation 2D inductance for extraction problems Calculation of Electrical Characteristics of Power Supply Buses in the Commutation Board of a Microprocessor Calculation of inductance in problems of designing superconductive microelectronic structures Compact model generation for distributed parameter systems Comparison of MOSFET and FinFET thermal characteristics
D
	Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures Drift-Diffusion Numerical Model of Photodetector with Controlled Relocation of Carrier Density Peaks Dynamic model for memory cell on tunnel magnetoresistance effect
F
	Features of processing and transmitting information in computing devices Features of simulation of SiGe:C heterojunction bipolar transistor
H
	High-Voltage Silicon Diode Simulation, the Dependences of Its Current Density from Temperature Construction
I
	Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity
M
	Mathematical Model of the SOT-MRAM Cell based on the Spin Hall Effect Method of calculation of integrated resistors of I/O cells of IC with code adjustment of the nominal value Modeling of graphene electronics analog devices Models of passive devices with the distributed parameters for the time domain analysis of nonlinear radio-frequency circuits
N
	New Algorithm for the 2D Capacitance calculation in the interconnect parasitic extraction problem New model of a threshold voltage of short-channel SiC MOS with deep impurity and capture levels Nonlinear Phase Macromodel for the Analysis of oscillator circuits Numerical Simulation of Photosensitive VLSI Pixels Numerical model for MISFETs characterization Numerical model of semiconductors with crystal heating
P
	Parameters extraction of the scaled MOS-transistor model
R
	Research of characteristics of artificial inductance on MOS transistors Research of electric and temperature area of safe work of planar power SoC MOS transistors
S
	SOI MOSFET Compact SPICE model for radiation-hardened 0.35 µm IC design SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C SPICE-model of SiGe HBT taking into account the aging effects SPICE Simulation of CMOS Circuits Behavior for Extreme Ambient Applications Using “Electro-Thermo-Rad” models SPICE models of optoelectronic elements for simulation of photosensitive PD-CMOS VLSI Semi-Natural MOSFET Compact Model Simulation of SEU failures in submicronic SoS CMOS cells of memory in view of temperature effects Simulation of leakage currents of ferroelectric capacitors in integrated circuits Simulation of the Operation of a Diamond Detector of Ionizing Radiation Synthesis of substrate models of SoC
T
	TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures Taking into Account the Simultaneous Effect of Low Temperatures and Penetrating Radiation on the Characteristics of the Bipolar and JFETs in the Circuit Simulation The Development of Multi-terminal Element Model with Arbitrary Number of Terminals for Circuit Simulator The Research of P-N+-Junction Electrophysical Behavior With Help of Simulation in Rectangular and Cylindrical Coordinate Systems The comparative analysis of circuit simulation models of SiGe heterojunction transistor The magnetic tunnel junction model for circuit design systems Theory of perturbations for four-terminal network with ferroelectric capacitor with negative differential capacitance Thermoelement Linear Dimensions Influence on Output Characteristics of Thermoelectric Generator Two-level reduction of models of parasitic circuits of the high order
U
	Using of VBIC model for SiGe integrated circuit application Using the gate capacitance of MOS transistor as LPF's capacitance and its impact on the PLL's characteristics of quality