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| The magnetic tunnel junction model for circuit design systems |
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| Authors |
| | Kostrov A.I. |
| | Stempitsky V.R. |
| | Danilyuk A.L. |
| | Borisenko V.E. |
| Date of publication |
| | 2008 |
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| Abstract |
| | The electrical macromodel of magnetic tunnel junction (MTJ) in the Verilog-AMS mixed-signal behavioral description language has been developed. The model is the basis for circuit simulation of a memory cell on tunnel magnetoresistance effect (MRAM). Experimental data and testing results of the model in Cadence Design System are presented. |
| Keywords |
| | Magnetoresistance memory, spintronics, magnetic tunnel junction, electrical model, equivalent circuit, Verilog-AMS |
| Library reference |
| | Kostrov A.I., Stempitsky V.R., Danilyuk A.L., Borisenko V.E. The magnetic tunnel junction model for circuit design systems // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 77-80. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/10.pdf |
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