| SOI MOSFET Compact SPICE model for radiation-hardened 0.35 µm IC design |
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| Authors |
| | Mokeev A.S. |
| | Karachkin S.V. |
| Date of publication |
| | 2014 |
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| Abstract |
| | This paper describes techniques and algorithms of modification of the standard SOI MOSFET compact SPICE model BSIMSOI3.2 for modeling the effects of stationary and pulsed ionizing radiation exposure. Radiation related parameters of the modified n-channel SOI MOSFET model were extracted. Circuit simulation with the developed SPICE models was performed. |
| Keywords |
| | SPICE model, radiation effects, IC, ionizing radiation, SOI MOSFET, extraction of parameters. |
| Library reference |
| | Mokeev A.S., Karachkin S.V. SOI MOSFET Compact SPICE model for radiation-hardened 0.35 µm IC design // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 155-158. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D094.pdf |
