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Themes

Listing of works with the partition by the subject of reports. Click on the work title to see its details. The selected set may be restricted by specifying a range of conference years, or by selecting a specific topic.

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ADC design problems
Cellular automata
Design of System-on-chip (SoC) and IP-blocks
Design of VLSI elements
Design of VLSI signal processors
Design of analog and mixed functional blocks of VLSI
Design of digital functional blocks of VLSI
Design of fault-tolerance systems
Design of micro-electromechanical systems
Design of nanoelectronic devices
Design of nanoelectronic devices based on Josephson junctions
Design of photodetecting VLSI
Design of radiation-resistant VLSI
Design of technological processes
Designing components for aerospace and navigation technology
Genetic algorithms in VLSI CAD
Methods and algorithms for automated layout design
Methods for high-level simulation
Methods of device technology simulation of VLSI
Methods of digital information processing and digital filters
Methods of electro-thermal simulation
Methods of logic synthesis and functional logic simulation ...
Methods of simulation of VLSI electrical characteristics
Models of devices for circuit simulation
Neural networks
Problems of development of sensory microcircuitry
Simulation of data transfer channels
Study of the magnetic properties of materials
Unconventional computing systems
Web-based VLSI CAD
design of memory cells
Selection on topic: Design of technological processes
Selected papers: from 2005 to 2024 year
In selection - 28 papers
A C D E F I M N O P R S T
A 
 
Absorption of Light by a Nanowire with Transitions of Carriers from the Valence Band to Donor States in the Presence of an Electric Field
Application of autophotoelectronic semiconductor microstructures for the analysis of gas mixes
Application of quasi-hydrodynamic model for the analysis of electronic transport in field and bipolar transistors in conditions of a pulse ionizing radiation in view of the raised temperatures
Atomic force microscopy of amorphous electrotechnical alloys Fe(Ni,Cu)(SiB)
C 
 
Characterization of Micro- and Mesoporous films with the Aid of Adsorption Ellipsometric Porosimetry Method
D 
 
Design of technology process of silicon-germanium heterobipolar transistors manufacture
Development and designing of integrated thermoelements
Development of manufacturing techniques of SoI plates
E 
 
End-to-end technology/device/circuit/system statistical design
F 
 
Features of electrical conductivity in doped quantum-dimensional systems in a transverse electric field
I 
 
Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator"
Investigation of Porous Silicon Dioxide Films Modified with Carbon
M 
 
Modeling of plasma-chemical etching technology in CF4/H2 mixture
Modeling of plasma-chemical etching technology in RF discharge
N 
 
New issues in application of diamond crystals in microelectronics and nanotechnologies
New negative photochromic spiropyran for molecular electronics and photovoltaics
New spiropyrans for creating elements of molecular electronics and photonics
O 
 
Optimization of technological regimes of manufacturing a bipolar heterotransistors
P 
 
Physical and chemical model of memory and switching effects in thin-film CdSe1-xTex elements
Porous Silicon Layers for Heteroepitaxial and Composite Structure Formation
R 
 
Radiation hardened EEPROM structures integrated with SOI CMOS techology
Researching VLSI RAM 8Ê on the basis of SoS structures
S 
 
Scanning Probe microscopy for nanostructures investigations from micro and nanoelectronics up to biomaterials
Simulation of processes of equilibrium and fast heat treatments at formation of the active areas of submicronic and nanomicronic ICs
Structure and electrophysical properties of porous carbon-modified dielectrics
T 
 
TCAD Study of Responsivity of n-channel MOS Dosimeter Fabricated in CMOS Processes
The Single Event Upset Forecasting in Digital and Analog Integrated Circuits in SAED 14nm FinFet Technology
The Technology of Manufacturing of Complementary Transistors on Gallium Nitride

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