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Using the gate capacitance of MOS transistor as LPF's capacitance and its impact on the PLL's characteristics of quality
Authors
	Bajkov V.D.
	Garmash A.A.
	Dubinskiy A.V.
Date of publication
	2014
Abstract
	The paper analyzes the advantages and disadvantages of using the gate capacitance of MOSFET as a low-pass filter capacity and its impact on the PLL's characteristics of quality
Keywords
	CMOS, VLSI, SoC, VCO, PLL
Library reference
	Bajkov V.D., Garmash A.A., Dubinskiy A.V. Using the gate capacitance of MOS transistor as LPF's capacitance and its impact on the PLL's characteristics of quality // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 43-46.
URL of paper
	http://www.mes-conference.ru/data/year2014/pdf/D155.pdf