| Research of electric and temperature area of safe work of planar power SoC MOS transistors |
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| Authors |
| | Artamonova E.A. |
| | Krasukov A.Yu. |
| Date of publication |
| | 2008 |
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| Abstract |
| | Paper is devoted to research of electric and temperature bounderies of area of safe work (ASW) of planar power Soc-MOS transistor by tools of device-technological simulation. ASW was investigated with and without taking into account effect of a self-warming up, and also under various conditions of heat removal from electrodes. |
| Keywords |
| | planar power SoC MOS transistors |
| Library reference |
| | Artamonova E.A., Krasukov A.Yu. Research of electric and temperature area of safe work of planar power SoC MOS transistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 247-250. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/44.pdf |
