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Comparison of MOSFET and FinFET thermal characteristics  

Authors
 Petrosyants K.O.
 Silkin D.S.
 Popov D.A.
Date of publication
 2021
DOI
 10.31114/2078-7707-2021-4-2-6

Abstract
 Thermal TCAD model of FinFET module consisting of eight parallel-connected fins is presented in the article. The results of modeling module self-heating and the dependence of overheating on the distance between the fins in the module are presented. A comparison of the overheating values for a single fin and MOSFET with similar structure parameters was carried out.
Keywords
 FinFET, MOSFET, Self-Heating, TCAD-simulation.
Library reference
 Petrosyants K.O., Silkin D.S., Popov D.A. Comparison of MOSFET and FinFET thermal characteristics // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 4. P. 2-6. doi:10.31114/2078-7707-2021-4-2-6
URL of paper
 http://www.mes-conference.ru/data/year2021/pdf/D068.pdf

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