| Features of simulation of SiGe:C heterojunction bipolar transistor |
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| Authors |
| | Petrosyants K.O. |
| | Torgovnikov R.A. |
| Date of publication |
| | 2008 |
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| Abstract |
| | In work features of simulation of SiGe:C heterojunction bipolar transistors are presented.
Dependences of boundary frequency fT and pressure of breakdown BVcbo of collector transition SiGe:C from concentration of carbon in base are investigated with method of device-technological simulation. |
| Keywords |
| | simulation of SiGe:C heterojunction bipolar transistor |
| Library reference |
| | Petrosyants K.O., Torgovnikov R.A. Features of simulation of SiGe:C heterojunction bipolar transistor // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 231-234. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/40.pdf |
