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| New model of a threshold voltage of short-channel SiC MOS with deep impurity and capture levels |
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| Authors |
| | Buniatyan V.V. |
| | Ayrapetyan V.M. |
| | Arutyunyan V.M. |
| | Tamrazyan A.A. |
| Date of publication |
| | 2008 |
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| Abstract |
| | It is carried out theoretical research of dependence of a threshold voltage of short-channel SiC MOS taking into accounting that impurity in the transistor channel are deep, and at the forbidden zone there are electron's trap levels. The factor of influence from presence of a superficial condition and two-dimensional distribution of potential under a gate is considered. The new analytical calculation model of the threshold voltage of the submicronic channel transistor is proposed. |
| Keywords |
| | short-channel SiC MOSFET, threshold voltage, deep impurity, trap levels |
| Library reference |
| | Buniatyan V.V., Ayrapetyan V.M., Arutyunyan V.M., Tamrazyan A.A. New model of a threshold voltage of short-channel SiC MOS with deep impurity and capture levels // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 225-230. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/39.pdf |
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