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Listing of works with the partition by the subject of reports. Click on the work title to see its details. The selected set may be restricted by specifying a range of conference years, or by selecting a specific topic.

Select: from 2005 2006 2008 2010 2012 2014 2016 2018 2020 2021 2022 2023 2024 to 2005 2006 2008 2010 2012 2014 2016 2018 2020 2021 2022 2023 2024 year

All topics ADC design problems Cellular automata Design of System-on-chip (SoC) and IP-blocks Design of VLSI elements Design of VLSI signal processors Design of analog and mixed functional blocks of VLSI Design of digital functional blocks of VLSI Design of fault-tolerance systems Design of micro-electromechanical systems Design of nanoelectronic devices Design of nanoelectronic devices based on Josephson junctions Design of photodetecting VLSI Design of radiation-resistant VLSI Design of technological processes Designing components for aerospace and navigation technology Genetic algorithms in VLSI CAD Methods and algorithms for automated layout design Methods for high-level simulation Methods of device technology simulation of VLSI Methods of digital information processing and digital filters Methods of electro-thermal simulation Methods of logic synthesis and functional logic simulation ... Methods of simulation of VLSI electrical characteristics Models of devices for circuit simulation Neural networks Problems of development of sensory microcircuitry Simulation of data transfer channels Study of the magnetic properties of materials Unconventional computing systems Web-based VLSI CAD design of memory cells

Selection on topic: Methods of device technology simulation of VLSI

Selected papers: from 2005 to 2024 year

In selection - 68 papers

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A
	Accuracy and adequacy of the analytical modeling of the temperature distribution in thermal microsystems Analysis of the effect of membrane shape at mechanical strength and parameter stability of MEMS pressure sensors
D
	Design Principles and Numerical Simulation of Microthermomechanical IR Imagers with Optical Readout Design of IC package with ceramic substrate for multicore processor Development and modeling for submicron PDCFET transistors Development of an optimum design of a magnetic field sensor on the basis of lateral magnetic transistor using tools of device technological simulation Development of methods for the analysis of defects in the gate dielectric on the test structures in the wafers Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures
0
	0.5 um SOI CMOS for Extreme Temperature Applications
C
	Calibration of numerical TCAD model for 180 nm SOI MOSFETs Carbon nanostructures plasma-catalytic growth technology: features and field emission circuits’ application Comparison of Double-gate Junctionless and Traditional MOSFETs by Means of TCAD Complex Standard Cells Design Features in Advanced FinFET Technologies Criteria of a choice of models at calculation of device characteristics of submicronic transistor structures
E
	Electro-thermal Simulation of a Bandgap End-to-end technology/device/circuit/system statistical design
F
	Features of electrical conductivity in doped quantum-dimensional systems in a transverse electric field Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design
H
	Heterojunction bipolar transistor with pnp structure in the gallium arsenide technology HBT-HEMT
I
	I-V Characteristics Calculation Model of SiC Based Nanoscale Mosfet With Deep Impurities and Trap Levels Impact of ionizing radiation on GaN HEMTs Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator" Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters Investigation of single event upset reliability for SOI CMOS SRAM cells using mixed-mode 3D TCAD-SPICE simulation Investigation of the influence dispersion of technological parameters of VLSI on resistance to TID effects by device-technological simulation
M
	Mathematical modelling of temperature distribution in thermal microsensors Mathematical simulation of electromigratory faulures of interlayer connection of VLSI Membrane-based thermal flow sensor working on calorimetric principle Methods electromigration analysis conducting lines using the accelerated measurement test structures located in the wafer Modeling of plasma-chemical etching technology in CF4/H2 mixture Modeling of plasma-chemical etching technology in RF discharge
N
	New spiropyrans for creating elements of molecular electronics and photonics Numerical Simulation of N-well MOSFET Hall Element Numerical model for MISFETs characterization Numerical model of semiconductors with crystal heating Numerical simulation of solar radiation transmittance for textured surface silicon photovoltaic cells
O
	One dimensional process and device simulation using spreadsheets On the Joint Application of the Matrix Method and the Apparatus of Generalized Powers of Bers for Mathematical Modeling of Heat and Mass Transfer in Semiconductor Materials of Electronic Engineering Optimization of technological regimes of manufacturing a bipolar heterotransistors Optimization of the breakdown voltage in IGBT structure on the base of its constructive and technology parameters
P
	Parameters extraction of the scaled MOS-transistor model Photosensitive CCD VLSI TCAD modeling Physical and Topological Simulation of Photodetectors for AIIIBV Integrated Optical Commutation Systems Taking into Account Dependence of Charge Carriers Mobilities on Electric Field Problems of Designing LDMOS-transistors Working at Increased Supply Voltage Problems of using device-technological simulation as tool of designing and ways of their solution Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects Prospects of using SiGe BiCMOS technology for creation of the SHF circuits
R
	Research of fully CMOS compatible EEPROM cell Research of influence of constructive-technology factors on sensitivity of magnetic transistor with methods of device-technological simulation Research of the RF performance of SiGe HBT during transition towards sub-100 nm technology limits Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over
S
	SPICE models of optoelectronic elements for simulation of photosensitive PD-CMOS VLSI Si BJT and SiGe HBT TCAD simulation taking into account radiation effects Simulation of MEMS Technology Based Thermoelectric Generators Simulation of SEU failures in submicronic SoS CMOS cells of memory in view of temperature effects Simulation of processes of equilibrium and fast heat treatments at formation of the active areas of submicronic and nanomicronic ICs Simulation of transistor structures of power electronics Software package for Technology Computer-Aided Design of spintronic devices based on magnetic tunneling junctions
T
	TCAD-model of CCD image sensor with vertical antiblooming TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface The Research of Electrophysical Behavior of Infrared GaAs-, GaP- and Al0.3Ga0.7As-structures with P–N-Junction by Means of Simulation The Technology of Manufacturing of Complementary Transistors on Gallium Nitride The analysis of dynamic processes of interference distribution in substrates of integrated elements with methods of device-technological simulation The method for CMOS APS light-voltage characteristics technological-device modeling The process flow simulation of the cathode-grid system and its emission properties
U
	Using TCAD in designing the planar powerful MOS-transistors having the raised breaking-down voltage in the off-state