Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Development of an optimum design of a magnetic field sensor on the basis of lateral magnetic transistor using tools of device technological simulation

Authors
 Kozlov A.V.
 Parmenov Yu.A.
Date of publication
 2005

Abstract
 In the report results of research of influence of speed superficial recombination on size and a sign on relative magnetic sensitivity two-collector bipolar transistor formed in a substrate are presented.
Keywords
 magnetic field sensor, lateral magnetic transistor, tools of device technological simulation
Library reference
 Kozlov A.V., Parmenov Yu.A. Development of an optimum design of a magnetic field sensor on the basis of lateral magnetic transistor using tools of device technological simulation // Problems of Perspective Microelectronic Systems Development - 2005. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2005. P. 179-184.
URL of paper
 http://www.mes-conference.ru/data/year2005/26.doc

Copyright © 2009-2024 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS