| Optimization of technological regimes of manufacturing a bipolar heterotransistors |
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| Authors |
| | Pankratov E.L. |
| Date of publication |
| | 2010 |
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| Abstract |
| | In this paper we consider a possibility to decrease depth of diffusive-junction rectifiers in bipolar transistors, which manufactured in semiconductor heterostructures. It has been shown, that to manufacture p-n-junctions with required depth it is necessary to infuse dopants in optimal moments of time. |
| Keywords |
| | Manufactoring of diffusion-junction rectifiers; heterostructures; optimization of annealing
of dopant |
| Library reference |
| | Pankratov E.L. Optimization of technological regimes of manufacturing a bipolar heterotransistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 662-665. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-24-54432.pdf |
