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Si BJT and SiGe HBT TCAD simulation taking into account radiation effects
Authors
	Petrosyants K.O.
	Kozhukhov M.V.
Date of publication
	2016
Abstract
	Si BJT and SiGe HBT performance degradation after irradiation is investigated using a new physical TCAD model built into the Synopsys Sentaurus tool. New equations for the physical parameters τ, S, Nit taking into account radiation effects after neutron, proton and gamma-radiation are included in the program. The following novelties were introduced into the Si BJT and the SiGe HBT TCAD model with account for radiation effects in: • The improved equations for coefficients of radiation induced degradation of carrier lifetime Kτ that account for doping concentration in the active regions. • Dependencies of traps concentration Nit(Dγ) and surface recombination velocity S(Dγ) at Si-SiO2 interfaces separately for EB-spacer and STI/DTI on absorbed dose Dγ taken from experiment. • The TCAD model to account for the impact of proton radiation based on additivity of the ionization and displacement effects. Comparison of simulated and experimental characteristics of the Si BJT and the SiGe HBT after subjection to doses up to 1·107 rad and fluences up to 1·1016 cm–2 shows the 10-20% error.
Keywords
	Si BJTs, SiGe HBTs, TCAD simulation, radiation effects, displacement damages, ionization effects, neutrons, protons, gamma-rays.
Library reference
	Petrosyants K.O., Kozhukhov M.V. Si BJT and SiGe HBT TCAD simulation taking into account radiation effects // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 4. P. 2-9.
URL of paper
	http://www.mes-conference.ru/data/year2016/pdf/D089.pdf