| Using TCAD in designing the planar powerful MOS-transistors having the raised breaking-down voltage in the off-state |
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| Authors |
| | Korolev M.A. |
| | Krasukov A.Yu. |
| Date of publication |
| | 2005 |
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| Abstract |
| | It is created simplified parameterized model for carrying out of the initial stage of optimization of the planar powerful MOS-transistor with the purpose of increasing its breaking-down voltage. |
| Keywords |
| | TCAD, planar powerful MOS-transistors |
| Library reference |
| | Korolev M.A., Krasukov A.Yu. Using TCAD in designing the planar powerful MOS-transistors having the raised breaking-down voltage in the off-state // Problems of Perspective Microelectronic Systems Development - 2005. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2005. P. 159-164. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2005/23.doc |
