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Porous Silicon Layers for Heteroepitaxial and Composite Structure Formation
Authors
	Grevtsov N.L.
	Lopato U.P.
	Chubenko E.B.
	Bondarenko V.P.
	Gavriliv I.M.
	Dronov A.A.
	Gavrilov S.A.
Date of publication
	2022
DOI
	10.31114/2078-7707-2022-3-150-156
Abstract
	The structure of porous silicon layers formed at different current densities and varied durations of anodic electrochemical treatment is evaluated. Statistical analysis of size distribution for porous silicon matrix elements (pore diameters and pore sidewall widths) obtained in various processing regimes is conducted. The significant role of the subsurface layer with smaller pore diameters generally present in mesoporous silicon on its structural parameters, and, consequently, its use as a structural matrix is established, and a relevant method of the layer’s chemical removal is proposed. Recommendations on the use of porous silicon layers in heteroepitaxial structures are given. As the obtained photoluminescence spectra would indicate, the use of a double-layered porous silicon buffer comprised of an upper thinner layer with a low porosity of 50%, formed in a cooled electrolyte, and a second thicker porous silicon layer with a porosity of 65-70%, formed at room temperature, can improve the structural perfection of GaN heteroepitaxial layers grown on silicon substrates by combining atomic layer deposition and molecular beam epitaxy. Recommendations are also given in regards to porous silicon’s use in the formation of silicon-germanium nanocomposites, emphasizing the importance of developing a simple and reproducible approach to filing pores with other materials. The results of thermal processing of porous silicon uniformly filled with germanium are demonstrated, yielding a Si-Ge alloy layer. It is suggested that varying the geometric parameters of the initial porous silicon layer will enable direct control over the resulting alloy’s elemental composition, making it a relatively simple and reproducible method of forming Si-Ge alloys with desired compositions and thicknesses.
Keywords
	porous silicon, electrodeposition, heteroepitaxy, nanocomposite structures.
Library reference
	Grevtsov N.L., Lopato U.P., Chubenko E.B., Bondarenko V.P., Gavriliv I.M., Dronov A.A., Gavrilov S.A. Porous Silicon Layers for Heteroepitaxial and Composite Structure Formation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 3. P. 150-156. doi:10.31114/2078-7707-2022-3-150-156
URL of paper
	http://www.mes-conference.ru/data/year2022/pdf/D046.pdf