| Design of technology process of silicon-germanium heterobipolar transistors manufacture |
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| Authors |
| | Drozdov D.G. |
| | Savchenko Ye.M. |
| Date of publication |
| | 2014 |
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| Abstract |
| | The article presents the results of computer-aided design of technological manufacturing processes of silicon-germanium heterobipolar transistors. Models of ion implantation, germanium diffusion and epitaxial growth of silicon-germanium films were investigated. The simulation of heterobipolar transistors constructive options with base formed by the selective and differential epitaxy was performed. |
| Keywords |
| | silicon-germanium, heterobipolar transistor, system of technology computer-aided design, differential and selective epitaxy |
| Library reference |
| | Drozdov D.G., Savchenko Ye.M. Design of technology process of silicon-germanium heterobipolar transistors manufacture // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 141-144. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D102.pdf |
