Listing of all the works of the organization. Click on the work title to get the full information.
| 2005 | |
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Chernyj A.I., Bogatyrev V.N., Povarnitsyna Z.M., Petrosyants K.O., Kharitonov I.A., Karelin A.A.
Design and development of SOI CMOS OA
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Petrosyants K.O., Ryabov N.I., Kazakov V.I., Makeev V.V., Rusakov D.N., Chirkin G.K.
Simulation of transistor structures of power electronics
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| 2006 | |
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Petrosyants K.O., Kozynko P.A.
Enhancing subsystem for thermal simulation of PCB in Mentor Graphics EDA
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Petrosyants K.O., Shirabajkin D.B.
Mathematical simulation of electromigratory faulures of interlayer connection of VLSI
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Petrosyants K.O., Torgovnikov R.A.
The comparative analysis of circuit simulation models of SiGe heterojunction transistor
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| 2008 | |
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Petrosyants K.O., Ryabov N.I., Kharitonov I.A., Kozynko P.A.
Electro-thermal simulation process implementation in Mentor Graphics IC Station
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Petrosyants K.O., Torgovnikov R.A.
Features of simulation of SiGe:C heterojunction bipolar transistor
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Kharitonov I.A., Petrosyants K.O., Orekhov E.V., Yatmanov A.P., Sambursky L.M.
Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects
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Petrosyants K.O.
Thermal simulation of MES components: from submicronic VLSI elements up to complex electronic blocks
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| 2010 | |
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Petrosyants K.O., Ryabov N.I.
Temperature sensors modeling for smart power ICs
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| 2012 | |
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Petrosyants K.O., Kharitonov I.A., Adonin A.S., Sidorov A.V., Aleksandrov A.V.
Digital circuit IBIS-models generation with account for temperature and radiation
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Petrosyants K.O., Kharitonov I.A., Orekhov E.V., Sambursky L.M., Yatmanov A.P., Voevodin A.V.
Investigation of single event upset reliability for SOI CMOS SRAM cells using mixed-mode 3D TCAD-SPICE simulation
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Gryaznov E.G., Mansurov A.N., Petrosyants K.O.
Radiation hardened EEPROM structures integrated with SOI CMOS techology
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| 2016 | |
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Petrosyants K.O., Kozhukhov M.V.
Si BJT and SiGe HBT TCAD simulation taking into account radiation effects
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| 2018 | |
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Petrosyants K.O., Ismail-zade M.R., Sambursky L.M., Kharitonov I.A.
SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C
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| 2020 | |
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Petrosyants K.O., Kharitonov I.A.
An improved procedure for electro-thermal simulation of the characteristics of Bi-CMOS-DMOS IC output stages
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Petrosyants K.O., Popov D.A., Ismail-zade M.R., Sambursky L.M., Bo Li, Wang Y.C.
TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures
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| 2021 | |
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Petrosyants K.O., Silkin D.S., Popov D.A.
Comparison of MOSFET and FinFET thermal characteristics
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Kozhukhov M.V., Mukhametdinova A.R.
SPICE-model of SiGe HBT taking into account the aging effects
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