Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Themes

---

Listing of works with the partition by the subject of reports. Click on the work title to see its details. The selected set may be restricted by specifying a range of conference years, or by selecting a specific topic.

Select: from 2005 2006 2008 2010 2012 2014 2016 2018 2020 2021 2022 2023 2024 to 2005 2006 2008 2010 2012 2014 2016 2018 2020 2021 2022 2023 2024 year

All topics ADC design problems Cellular automata Design of System-on-chip (SoC) and IP-blocks Design of VLSI elements Design of VLSI signal processors Design of analog and mixed functional blocks of VLSI Design of digital functional blocks of VLSI Design of fault-tolerance systems Design of micro-electromechanical systems Design of nanoelectronic devices Design of nanoelectronic devices based on Josephson junctions Design of photodetecting VLSI Design of radiation-resistant VLSI Design of technological processes Designing components for aerospace and navigation technology Genetic algorithms in VLSI CAD Methods and algorithms for automated layout design Methods for high-level simulation Methods of device technology simulation of VLSI Methods of digital information processing and digital filters Methods of electro-thermal simulation Methods of logic synthesis and functional logic simulation ... Methods of simulation of VLSI electrical characteristics Models of devices for circuit simulation Neural networks Problems of development of sensory microcircuitry Simulation of data transfer channels Study of the magnetic properties of materials Unconventional computing systems Web-based VLSI CAD design of memory cells

Selection on topic: Design of photodetecting VLSI

Selected papers: from 2005 to 2024 year

In selection - 32 papers

C

D

E

F

I

M

N

O

P

S

T

C
	CMOS-APS element with high charge-collection efficiency Constructive and technological design of silicon color photocells with deep color separation based on isotype ð+-ð junctions
D
	Design Principles and Numerical Simulation of Microthermomechanical IR Imagers with Optical Readout Designing of CMOS linear and matrix transformers of the X-ray image with the active sensor cells Development and researches of modern linear photosensitive devices with CCD Drift-Diffusion Numerical Model of Photodetector with Controlled Relocation of Carrier Density Peaks
E
	Experience of development of CCD matrix photoreceivers with interlower case carry Experience of development of the high-speed matrix CCD, working in a mode of a time delay and accumulation of a charge Extended Drift-Diffusion Model of High-Speed Photodetectors for On-Chip Optical Interconnections
F
	Features of constructions of specialized CCD matrixes
I
	IR photosensitive MEMS elements
M
	Miniature and highly sensitive proximity infrared sensor Modelling of frequency response of optomechanical thermal microsensors Modulation Transfer Function Model for Photosensitive VLSI Under One Single Impact Particle Event
N
	Nano-electromechanical thermo-sensitive elements New generation of X-ray detectors on pixel array Numerical Simulation of Photosensitive VLSI Pixels
O
	Optical Receiver Architecture for Microprocessor Systems Optimal design of the MEMS thermopile element for an IR imager array
P
	Photoconductive Switch for MmWave Substrate Integrated Waveguide (SIW) Photosensitive CCD: state-of-the-art and development perspectives Photosensitive CCD VLSI TCAD modeling Physical-topological model of modulation transfer fuction Physical and Topological Simulation of Photodetectors for AIIIBV Integrated Optical Commutation Systems Taking into Account Dependence of Charge Carriers Mobilities on Electric Field
S
	SPICE models of optoelectronic elements for simulation of photosensitive PD-CMOS VLSI Si/Ge Multiple Quantum Well pin-Photodiode Structural and technological solutions of diamond-based multi-element UV photodetectors
T
	TCAD-model of CCD image sensor with vertical antiblooming TCAD Simulation of the Etching of the Sacrificial Layer in the Sensitive Element of the IR Microbolometer Array Based on the SOI Structure The method for CMOS APS light-voltage characteristics technological-device modeling The method for photosensitive matrix VLSI modulation transfer function simulation The position sensor IC based on a photoreceiving ruler with reading on a CCD with hidden channel