| Structural and technological solutions of diamond-based multi-element UV photodetectors |
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| Authors |
| | Altukhov A.A. |
| Date of publication |
| | 2022 |
| DOI |
| | 10.31114/2078-7707-2022-4-187-192 |
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| Abstract |
| | The results of research on the development of constructive and technological solutions for photosensitive elements of multi-element diamond UV-photodetectors are presented. The results of the application of ion implantation of boron and nitrogen ions for the formation of buried photosensitive layers in diamond are presented. It has been shown that poly-energy implantation of large doses of boron makes it possible to obtain layers with high conductivity at room temperature. The obtained experimental dependences on ion dose and energy demonstrate the possibilities of creating highly compensated, weakly doped p-type layers and highly doped p+-type layers. The design and topology of photosensitive cells based on ion-implanted layers for matrix diamond photodetectors are shown. |
| Keywords |
| | diamond, photodetector, ultraviolet range, multi-element photodetector, ion implantation |
| Library reference |
| | Altukhov A.A. Structural and technological solutions of diamond-based multi-element UV photodetectors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2022. Issue 4. P. 187-192. doi:10.31114/2078-7707-2022-4-187-192 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2022/pdf/D075.pdf |
