| Si/Ge Multiple Quantum Well pin-Photodiode |
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| Authors |
| | Kulinich I.V. |
| | Talovskaya A.A. |
| | Shesterikov E.V. |
| Date of publication |
| | 2021 |
| DOI |
| | 10.31114/2078-7707-2021-3-171-174 |
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| Abstract |
| | In the study, various designs of a silicon pin of a photodiode with quantum wells, filaments and dots based on Si/Ge heterostructure are considered. Calculations of the dark current, photocurrent and speed of a pin photodiode for various designs with quantum structures are presented. The results obtained made it possible to analyze and formulate recommendations for choosing a Si pin photodiode design for such applications as telecommunications, optical location and optical vision systems at wavelength of 1.55 μm. |
| Keywords |
| | pin photodiode, quantum structures, heterostructure. |
| Library reference |
| | Kulinich I.V., Talovskaya A.A., Shesterikov E.V. Si/Ge Multiple Quantum Well pin-Photodiode // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 3. P. 171-174. doi:10.31114/2078-7707-2021-3-171-174 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2021/pdf/D045.pdf |
