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Themes

Listing of works with the partition by the subject of reports. Click on the work title to see its details. The selected set may be restricted by specifying a range of conference years, or by selecting a specific topic.

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ADC design problems
Cellular automata
Design of System-on-chip (SoC) and IP-blocks
Design of VLSI elements
Design of VLSI signal processors
Design of analog and mixed functional blocks of VLSI
Design of digital functional blocks of VLSI
Design of fault-tolerance systems
Design of micro-electromechanical systems
Design of nanoelectronic devices
Design of nanoelectronic devices based on Josephson junctions
Design of photodetecting VLSI
Design of radiation-resistant VLSI
Design of technological processes
Designing components for aerospace and navigation technology
Genetic algorithms in VLSI CAD
Methods and algorithms for automated layout design
Methods for high-level simulation
Methods of device technology simulation of VLSI
Methods of digital information processing and digital filters
Methods of electro-thermal simulation
Methods of logic synthesis and functional logic simulation ...
Methods of simulation of VLSI electrical characteristics
Models of devices for circuit simulation
Neural networks
Problems of development of sensory microcircuitry
Simulation of data transfer channels
Study of the magnetic properties of materials
Unconventional computing systems
Web-based VLSI CAD
design of memory cells
Selection on topic: Study of the magnetic properties of materials
Selected papers: from 2005 to 2024 year
In selection - 15 papers
A D E F M N S T
A 
 
Amorphous glass-coated microwires for applications as embedded stress sensors in functional materials
D 
 
Dynamics of Magnetization in the Free Layer of a Spin Valve Under the Influence of Magnetic Field, Perpendicular and Parallel to the Layer Plane
E 
 
Energy efficiency and performance of spin-valve structures in MRAM and HMDD
F 
 
Features of magnetization reversal in a MRAM cell — I. In-plane anisotropy
Features of magnetization reversal in a MRAM cell — II. Perpendicular anisotropy
Field-like torque-component influence on the magnetization dynamics in the three-layered nanostructure
Frequency and amplitude characteristics of STNO based on a spin valve with planar and perpendicular layer anisotropy
M 
 
Mathematical Model of the SOT-MRAM Cell based on the Spin Hall Effect
Mathematical model of a cylindrical SOT-MRAM cell
N 
 
Nano-dimensional effect at planar inductance with “conducting film inside current ring”-technology
Nanostructured superconducting film concentrator in the magnetic field sensor
S 
 
Simulation of Magnetization Dynamics in Three-layered Ferromagnetic Structures with Pinned Boundaries
Software package for Technology Computer-Aided Design of spintronic devices based on magnetic tunneling junctions
T 
 
The Energy of the Bound State of Zero Radius Impurity Center in a Quantum Wire in External Electric and Magnetic Fields
Tunable electric polarization of amorphous ferromagnetic wires at GHz frequencies for wireless sensing applications

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