2005  
 
Pugachev A.A. Numerical Simulation of Photosensitive VLSI Pixels

2006  
 
Budyakov A.S., Prokopenko N.N., Starchenko E.I., Savchenko Ye.M., Krutchinsky S.G. Experience in design and modeling of analog circuits with limited parameters based on Russian bipolar technology

 
Prokopenko N.N., Budyakov A.S., Kovbasyuk N.V., Krutchinsky S.G., Savchenko Ye.M. Methods of compensation of basic components of the output capacitance of transistors in analog chips

 
Pugachev A.A., Osochkin S.S. Physicaltopological model of modulation transfer fuction

 
Prokopenko N.N., Budyakov A.S., Savchenko Ye.M., Korneev S.V. The dynamic extreme parameters of operational amplifiers with voltage feedback and amplifiers with current feedback in linear and nonlinear modes

2008  
 
Savchenko Ye.M. Broadband integrated SHF doubler of frequency

 
Prokopenko N.N., Budyakov A.S., Savchenko Ye.M. Operational amplifiers with generalized current feedback

 
Pugachev A.A., Maklakova O.V., Kushnir A.A. Photosensitive CCD VLSI TCAD modeling

 
Andreev P.P., Pugachev A.A., Khodosh L.S. The project of the onchip processor for videostream processing are developed. This project are based on Russian SIMD processor PARS

2010  
 
Budyakov A.S., Savchenko Ye.M., Pronin A.A., Kozynko P.A. A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology

 
Prokopenko N.N., Budyakov P.S., Serebryakov A.I. Architecture of the microwave differential operating amplifiers with paraphase output

 
Pugachev A.A., Stempkovsky A.L. CMOSAPS element with high chargecollection efficiency

 
Prokopenko N.N., Serebryakov A.I., Budyakov P.S. Method of Improving the Stability of Zero Analog Circuits with HighImpedance Node in the Conditions of Temperature and Radiation Effects

 
Drozdov D.G., Savchenko Ye.M., Zubkov A.M. Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over

2012  
 
Prokopenko N.N., Budyakov P.S., Serebryakov A.I. Autonomous parameters of of transistors of uncommited logic array ABMK_1_3 in radiation and temperature influences

 
Budyakov P.S., Budyakov A.S., Prokopenko N.N. Comparative analysis of active mmwave SiGe mixers

 
Drozdov D.G., Savchenko Ye.M., Siomko V.O. Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design

 
Prokopenko N.N., Budyakov P.S., Pakhomov I.V. Methods to improve the gain of the classical stages on bipolar transistors at low supply voltage

 
Kostukov E.V., Pospelova M.A., Pugachev A.A. TCADmodel of CCD image sensor with vertical antiblooming

2014  
 
Drozdov D.G., Savchenko Ye.M. Design of technology process of silicongermanium heterobipolar transistors manufacture

 
Pugachev A.A., Ivanova G.A. The method for photosensitive matrix VLSI modulation transfer function simulation

2016  
 
Kononov A., Pugachev A.A. The method for CMOS APS lightvoltage characteristics technologicaldevice modeling

2018  
 
Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Prokopenko N.N., Budyakov P.S. Design of Voltage Comparators Based on the Elements of the RadiationHardened LowTemperature BiJFET Array Chip MH2XA030

 
Pugachev A.A., Ivanova G.A. Modulation Transfer Function Model for Photosensitive VLSI Under One Single Impact Particle Event

2020  
 
Pilipenko A.M., Prokopenko N.N., Budyakov P.S. Application of the template model for approximation of differential characteristics of complementary JFETs

 
Drozdov D.G., Prokopenko N.N., Savchenko Ye.M., Dukanov P.A., Grushin A.I. Research of highvoltage complementary junction fieldeffect transistors over a range of temperature using methods of TCAD process/device modeling

2021  
 
Balandin D.A., Kuzmin A.D., Surkov N.S. Analysis of the Frequency Synthesizers Architecture Evolution

