Listing of all the works of the organization. Click on the work title to get the full information.
| 2005 | |
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Pugachev A.A.
Numerical Simulation of Photosensitive VLSI Pixels
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| 2006 | |
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Budyakov A.S., Prokopenko N.N., Starchenko E.I., Savchenko Ye.M., Krutchinsky S.G.
Experience in design and modeling of analog circuits with limited parameters based on Russian bipolar technology
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Prokopenko N.N., Budyakov A.S., Kovbasyuk N.V., Krutchinsky S.G., Savchenko Ye.M.
Methods of compensation of basic components of the output capacitance of transistors in analog chips
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Pugachev A.A., Osochkin S.S.
Physical-topological model of modulation transfer fuction
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Prokopenko N.N., Budyakov A.S., Savchenko Ye.M., Korneev S.V.
The dynamic extreme parameters of operational amplifiers with voltage feedback and amplifiers with current feedback in linear and nonlinear modes
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| 2008 | |
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Savchenko Ye.M.
Broadband integrated SHF doubler of frequency
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Prokopenko N.N., Budyakov A.S., Savchenko Ye.M.
Operational amplifiers with generalized current feedback
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Pugachev A.A., Maklakova O.V., Kushnir A.A.
Photosensitive CCD VLSI TCAD modeling
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Andreev P.P., Pugachev A.A., Khodosh L.S.
The project of the on-chip processor for videostream processing are developed. This project are based on Russian SIMD processor PARS
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| 2010 | |
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Budyakov A.S., Savchenko Ye.M., Pronin A.A., Kozynko P.A.
A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology
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Prokopenko N.N., Budyakov P.S., Serebryakov A.I.
Architecture of the microwave differential operating amplifiers with paraphase output
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Pugachev A.A., Stempkovsky A.L.
CMOS-APS element with high charge-collection efficiency
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Prokopenko N.N., Serebryakov A.I., Budyakov P.S.
Method of Improving the Stability of Zero Analog Circuits with High-Impedance Node in the Conditions of Temperature and Radiation Effects
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Drozdov D.G., Savchenko Ye.M., Zubkov A.M.
Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over
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| 2012 | |
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Prokopenko N.N., Budyakov P.S., Serebryakov A.I.
Autonomous parameters of of transistors of uncommited logic array ABMK_1_3 in radiation and temperature influences
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Budyakov P.S., Budyakov A.S., Prokopenko N.N.
Comparative analysis of active mm-wave SiGe mixers
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Drozdov D.G., Savchenko Ye.M., Siomko V.O.
Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design
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Prokopenko N.N., Budyakov P.S., Pakhomov I.V.
Methods to improve the gain of the classical stages on bipolar transistors at low supply voltage
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Kostukov E.V., Pospelova M.A., Pugachev A.A.
TCAD-model of CCD image sensor with vertical antiblooming
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| 2014 | |
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Drozdov D.G., Savchenko Ye.M.
Design of technology process of silicon-germanium heterobipolar transistors manufacture
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Pugachev A.A., Ivanova G.A.
The method for photosensitive matrix VLSI modulation transfer function simulation
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| 2016 | |
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Kononov A., Pugachev A.A.
The method for CMOS APS light-voltage characteristics technological-device modeling
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| 2018 | |
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Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Prokopenko N.N., Budyakov P.S.
Design of Voltage Comparators Based on the Elements of the Radiation-Hardened Low-Temperature BiJFET Array Chip MH2XA030
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Pugachev A.A., Ivanova G.A.
Modulation Transfer Function Model for Photosensitive VLSI Under One Single Impact Particle Event
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| 2020 | |
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Pilipenko A.M., Prokopenko N.N., Budyakov P.S.
Application of the template model for approximation of differential characteristics of complementary JFETs
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Drozdov D.G., Prokopenko N.N., Savchenko Ye.M., Dukanov P.A., Grushin A.I.
Research of high-voltage complementary junction field-effect transistors over a range of temperature using methods of TCAD process/device modeling
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| 2021 | |
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Balandin D.A., Kuzmin A.D., Surkov N.S.
Analysis of the Frequency Synthesizers Architecture Evolution
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