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Research of highvoltage complementary junction fieldeffect transistors over a range of temperature using methods of TCAD process/device modeling 




Authors 
 Drozdov D.G. 
 Prokopenko N.N. 
 Savchenko Ye.M. 
 Dukanov P.A. 
 Grushin A.I. 
Date of publication 
 2020 

Abstract 
 This article presents results of TCAD process and device modeling of complementary junction fieldeffect transistors, integrated in microwave complementary bipolar technology process. A study of the models was carried out in order to analyze the operation of transistors. Models and solution methods needed for calculations over a wide range of temperature up to cryogenic ones were selected. Among these models were the Philips mobility model, the model of an impurity incomplete ionization, the selfheating model, etc. The results of varying the model coefficients of an impurity incomplete ionization, described in the literature, were analyzed and no significant difference was found. The possibility of using a simplified model for calculating thermal effects that effectively simulated the effect of selfheating was shown. This was especially important in calculations for cryogenic temperatures, where convergence is significantly reduced when solving a system of differential equations. The choice of a solution algorithm was shown to be an effective method of achieving convergence with decreasing temperature. The most efficient algorithm for cryogenic temperature was SLIP90. This algorithm provided the calculation of currentvoltage characteristics for the following objects and tasks: multigate transistors at temperatures corresponding to the beginning of the region of “freezing out” of impurity charge carriers, the presence of areas with a floating potential, etc. Taking into account the developed design technique, the temperature dependences of the main parameters of complementary JFETs were analyzed, and a number of constructive and technological solutions to reduce the influence of ultralow temperatures on the parameters of transistors were proposed. The drainsource voltage range of the complementary junction fieldeffect transistors was also determined taking into account the temperature. It was found that a change in temperature had a greater effect on the pchannel junction fieldeffect transistor, and the use of the emitter region as the upper gate affected the temperature stability. Reducing the cutoff voltage allowed us to reduce the effect of temperature on the shortedgate drain current over a range of temperature of CJFET. 
Keywords 
 complementary JFET, technology computer aided design, cryogenic temperature 
Library reference 
 Drozdov D.G., Prokopenko N.N., Savchenko Ye.M., Dukanov P.A., Grushin A.I. Research of highvoltage complementary junction fieldeffect transistors over a range of temperature using methods of TCAD process/device modeling // Problems of Perspective Micro and Nanoelectronic Systems Development  2020. Issue 4. P. 6675. 
URL of paper 
 http://www.mesconference.ru/data/year2020/pdf/D071.pdf 

