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Listing of all the works of the author. Click on the work title to get the full information.
2006 | |
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Prokopenko N.N., Budyakov A.S., Savchenko Ye.M., Korneev S.V. The dynamic extreme parameters of operational amplifiers with voltage feedback and amplifiers with current feedback in linear and nonlinear modes
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Prokopenko N.N., Budyakov A.S., Kovbasyuk N.V., Krutchinsky S.G., Savchenko Ye.M. Methods of compensation of basic components of the output capacitance of transistors in analog chips
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Budyakov A.S., Prokopenko N.N., Starchenko E.I., Savchenko Ye.M., Krutchinsky S.G. Experience in design and modeling of analog circuits with limited parameters based on Russian bipolar technology
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2008 | |
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Prokopenko N.N., Budyakov A.S., Savchenko Ye.M. Operational amplifiers with generalized current feedback
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Savchenko Ye.M. Broadband integrated SHF doubler of frequency
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2010 | |
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Budyakov A.S., Savchenko Ye.M., Pronin A.A., Kozynko P.A. A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology
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Drozdov D.G., Savchenko Ye.M., Zubkov A.M. Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over
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2012 | |
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Drozdov D.G., Savchenko Ye.M., Siomko V.O. Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design
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2014 | |
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Drozdov D.G., Savchenko Ye.M. Design of technology process of silicon-germanium heterobipolar transistors manufacture
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2020 | |
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Drozdov D.G., Prokopenko N.N., Savchenko Ye.M., Dukanov P.A., Grushin A.I. Research of high-voltage complementary junction field-effect transistors over a range of temperature using methods of TCAD process/device modeling
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