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Kozhukhov M.V.

Moscow State Institute of Electronics and Mathematics (Technical University)

Listing of all the works of the author. Click on the work title to get the full information.

2016
		Petrosyants K.O., Kozhukhov M.V. Si BJT and SiGe HBT TCAD simulation taking into account radiation effects
2021
		Kozhukhov M.V., Mukhametdinova A.R. SPICE-model of SiGe HBT taking into account the aging effects