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Listing of all the works of the author. Click on the work title to get the full information.
| 2005 | |
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Korolev M.A., Krasukov A.Yu.
Using TCAD in designing the planar powerful MOS-transistors having the raised breaking-down voltage in the off-state
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| 2008 | |
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Artamonova E.A., Krasukov A.Yu.
Research of electric and temperature area of safe work of planar power SoC MOS transistors
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| 2010 | |
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters
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| 2014 | |
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Artamonova E.A., Klyuchnikov A.S., Krasukov A.Yu., Krupkina T.Yu., Shelepin N.A.
Calibration of numerical TCAD model for 180 nm SOI MOSFETs
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Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Numerical model for MISFETs characterization
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity
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| 2016 | |
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Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
One dimensional process and device simulation using spreadsheets
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
0.5 um SOI CMOS for Extreme Temperature Applications
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| 2018 | |
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Chaplygin Yu.A., Krupkina T.Yu., Korolev M.A., Krasukov A.Yu., Artamonova E.A.
Comparison of Double-gate Junctionless and Traditional MOSFETs by Means of TCAD
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| 2022 | |
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Bekenova A.T., Artamonova E.A., Krasukov A.Yu.
TCAD Study of Responsivity of n-channel MOS Dosimeter Fabricated in CMOS Processes
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