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Moscow State Institute of Electronics and Mathematics (Technical University)

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Listing of all the works of the organization. Click on the work title to get the full information.

2005
		Chernyj A.I., Bogatyrev V.N., Povarnitsyna Z.M., Petrosyants K.O., Kharitonov I.A., Karelin A.A. Design and development of SOI CMOS OA
		Torgovnikov R.A. Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures
		Petrosyants K.O., Ryabov N.I., Kazakov V.I., Makeev V.V., Rusakov D.N., Chirkin G.K. Simulation of transistor structures of power electronics
2006
		Petrosyants K.O., Kozynko P.A. Enhancing subsystem for thermal simulation of PCB in Mentor Graphics EDA
		Petrosyants K.O., Shirabajkin D.B. Mathematical simulation of electromigratory faulures of interlayer connection of VLSI
		Petrosyants K.O., Torgovnikov R.A. The comparative analysis of circuit simulation models of SiGe heterojunction transistor
2008
		Torgovnikov R.A. Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology
		Kozynko P.A. Electro-thermal modes simulation for PCB and IC in industrial class EDA environment
		Petrosyants K.O., Ryabov N.I., Kharitonov I.A., Kozynko P.A. Electro-thermal simulation process implementation in Mentor Graphics IC Station
		Petrosyants K.O., Torgovnikov R.A. Features of simulation of SiGe:C heterojunction bipolar transistor
2010
		Budyakov A.S., Savchenko Ye.M., Pronin A.A., Kozynko P.A. A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology
		Petrosyants K.O., Ryabov N.I. Temperature sensors modeling for smart power ICs