| Automated Picosecond Laser Facility for Single Event Effects Simulation in Microelectronic Devices under Space Environment |
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| Authors |
| | Egorov A.N. |
| | Mavritskiy O.B. |
| | Chumakov A.I. |
| | Pechenkin A.A. |
| | Koltsov D.O. |
| Date of publication |
| | 2012 |
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| Abstract |
| | Main technical characteristics of automated local radiation effects simulation facility based on wavelength tunable solid state picosecond laser are presented. Its design features, capabilities and advantages aimed on simulation of single event effects under space environment in modern Si, GaAs, SiGe etc. microelectronic devices are discussed. |
| Keywords |
| | single heavy ion; single event effect; radiation hardness; picosecond laser; focused laser radiation |
| Library reference |
| | Egorov A.N., Mavritskiy O.B., Chumakov A.I., Pechenkin A.A., Koltsov D.O. Automated Picosecond Laser Facility for Single Event Effects Simulation in Microelectronic Devices under Space Environment // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 604-607. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D124.pdf |
