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Torgovnikov R.A.

Moscow State Institute of Electronics and Mathematics (Technical University)

Listing of all the works of the author. Click on the work title to get the full information.

2005
		Torgovnikov R.A. Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures
2006
		Petrosyants K.O., Torgovnikov R.A. The comparative analysis of circuit simulation models of SiGe heterojunction transistor
2008
		Petrosyants K.O., Torgovnikov R.A. Features of simulation of SiGe:C heterojunction bipolar transistor
		Torgovnikov R.A. Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology