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Listing of all the works of the author. Click on the work title to get the full information.
| 2005 | |
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Balashov A.G., Krupkina T.Yu., Tsimbalov A.S.
Criteria of a choice of models at calculation of device characteristics of submicronic transistor structures
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Korolev M.A., Krupkina T.Yu., Chaplygin Yu.A.
Problems of using device-technological simulation as tool of designing and ways of their solution
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| 2006 | |
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Adamov Yu.F., Gorshkova N.M., Krupkina T.Yu.
The Utilization of Photolayers for Bipolar Transistors Implementation in Typical CMOS Process
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| 2008 | |
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Krupkina T.Yu., Rodionov D.V.
The analysis of dynamic processes of interference distribution in substrates of integrated elements with methods of device-technological simulation
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| 2010 | |
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Losev V.V., Chaplygin Yu.A., Krupkina T.Yu.
New methods of construction of microelectronic digital systems with low power consumption
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters
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| 2012 | |
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Artamonova E.A., Golishnikov A.A., Krupkina T.Yu., Rodionov D.V., Chaplygin Yu.A.
TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface
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Losev V.V., Krupkina T.Yu., Chaplygin Yu.A.
Resonant energy efficiency driver
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| 2014 | |
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Artamonova E.A., Klyuchnikov A.S., Krasukov A.Yu., Krupkina T.Yu., Shelepin N.A.
Calibration of numerical TCAD model for 180 nm SOI MOSFETs
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Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Numerical model for MISFETs characterization
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity
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| 2016 | |
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Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
One dimensional process and device simulation using spreadsheets
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
0.5 um SOI CMOS for Extreme Temperature Applications
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Losev V.V., Chaplygin Yu.A., Krupkina T.Yu., Putrya M.G.
Features of processing and transmitting information in computing devices
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| 2018 | |
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Datsuk A.M., Balashov A.M., Timoshenkov V.P., Krupkina T.Yu.
Electro-thermal Simulation of a Bandgap
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Chaplygin Yu.A., Krupkina T.Yu., Korolev M.A., Krasukov A.Yu., Artamonova E.A.
Comparison of Double-gate Junctionless and Traditional MOSFETs by Means of TCAD
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