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Listing of all the works of the author. Click on the work title to get the full information.
2008 | |
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Artamonova E.A., Krasukov A.Yu. Research of electric and temperature area of safe work of planar power SoC MOS transistors
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2010 | |
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters
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2012 | |
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Artamonova E.A., Golishnikov A.A., Krupkina T.Yu., Rodionov D.V., Chaplygin Yu.A. TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface
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2014 | |
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Artamonova E.A., Klyuchnikov A.S., Krasukov A.Yu., Krupkina T.Yu., Shelepin N.A. Calibration of numerical TCAD model for 180 nm SOI MOSFETs
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Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. Numerical model for MISFETs characterization
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity
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2016 | |
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Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. One dimensional process and device simulation using spreadsheets
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Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. 0.5 um SOI CMOS for Extreme Temperature Applications
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2018 | |
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Chaplygin Yu.A., Krupkina T.Yu., Korolev M.A., Krasukov A.Yu., Artamonova E.A. Comparison of Double-gate Junctionless and Traditional MOSFETs by Means of TCAD
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2022 | |
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Bekenova A.T., Artamonova E.A., Krasukov A.Yu. TCAD Study of Responsivity of n-channel MOS Dosimeter Fabricated in CMOS Processes
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