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Artamonova E.A.

MIET

Listing of all the works of the author. Click on the work title to get the full information.

2008 
  Artamonova E.A., Krasukov A.Yu.
Research of electric and temperature area of safe work of planar power SoC MOS transistors
2010 
  Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters
2012 
  Artamonova E.A., Golishnikov A.A., Krupkina T.Yu., Rodionov D.V., Chaplygin Yu.A.
TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface
2014 
  Artamonova E.A., Klyuchnikov A.S., Krasukov A.Yu., Krupkina T.Yu., Shelepin N.A.
Calibration of numerical TCAD model for 180 nm SOI MOSFETs
  Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Numerical model for MISFETs characterization
  Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity
2016 
  Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
One dimensional process and device simulation using spreadsheets
  Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A.
0.5 um SOI CMOS for Extreme Temperature Applications
2018 
  Chaplygin Yu.A., Krupkina T.Yu., Korolev M.A., Krasukov A.Yu., Artamonova E.A.
Comparison of Double-gate Junctionless and Traditional MOSFETs by Means of TCAD
2022 
  Bekenova A.T., Artamonova E.A., Krasukov A.Yu.
TCAD Study of Responsivity of n-channel MOS Dosimeter Fabricated in CMOS Processes
 

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