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Dvornikov O.V.

MNIPI

International Science and Technology Center "MicAn"

Listing of all the works of the author. Click on the work title to get the full information.

2006
		Dvornikov O.V., Tchekhovski V.A., Krutchinsky S.G., Shchekin D.A., Shcherbinin I.P., Prokopenko N.N., Starchenko E.I. Practical developments and projects for substitution of import and IP-projects on base of radiation-resistant analog array chip
2010
		Dvornikov O.V., Tchekhovski V.A. The approach to investigation of analog ICs radiation hardness
		Dvornikov O.V., Grishkov V.N. Radiation hardened analog IC design. Part 1. Radiation effects simulation in the "Spice-like" programs
		Dvornikov O.V. Radiation hardened analog IC design. Part 2. The main analog circuits for the master slice array "ABMK 1-3"
2012
		Titov A.E., Dvornikov O.V. Radiation-resistant instrumentation amplifiers for ABMC
		Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Bogatyrev Yu.V., Lastovski S.B. Radiation hardened analog IC
2016
		Dvornikov O.V., Prokopenko N.N., Bugakova A.V., Ignashin A.A. The Instrumentation and Differential Difference Amplifiers of Sensor Systems Based on the New Microcircuit of the Structured Array MH2XA010
2018
		Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Prokopenko N.N., Budyakov P.S. Design of Voltage Comparators Based on the Elements of the Radiation-Hardened Low-Temperature BiJFET Array Chip MH2XA030
2020
		Dvornikov O.V., Tchekhovski V.A., Prokopenko N.N., Galkin Ya.D., Kunts A.V. Taking into Account the Simultaneous Effect of Low Temperatures and Penetrating Radiation on the Characteristics of the Bipolar and JFETs in the Circuit Simulation
2021
		Dvornikov O.V., Tchekhovski V.A., Prokopenko N.N., Galkin Ya.D., Kunts A.V., Chumakov V.E. Analog integrated circuits design for extreme environmental conditions on the base of master slice array MH2XA031
		Dvornikov O.V., Pavluchik A.A., Prokopenko N.N., Tchekhovski V.A., Kunts A.V., Chumakov V.E. GaAs analog master slice
2022
		Prokopenko N.N., Dvornikov O.V., Chumakov V.E., Kleimenkin D.V. Gallium arsenide operational amplifiers with transconductance multipliers of input differential stages
		Lovshenko I.Yu., Kratovich P.S., Stempitsky V.R., Dvornikov O.V., Kunts A.V., Pavluchik A.A. Heterojunction bipolar transistor with pnp structure in the gallium arsenide technology HBT-HEMT