SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C

Petrosyants, K.O.; Ismail-zade, M.R.; Sambursky, L.M.; Kharitonov, I.A.

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SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C

Authors

Date of publication

2018

DOI

10.31114/2078-7707-2018-3-111-117

Abstract

A set of modified compact spice models of field-effect transistors is presented: with isolated gate (MOSFET) and with pn junction control (JFET) for circuit simulation in a temperature range of 200°C, which is important for space applications. All models are constructed using the approach combining macromodeling based on the standard models available in the library of spice models and introducing approximating dependencies for the temperature-dependent parameters of the model. For all models of the complex, a unified automated procedure for extraction of parameters has been worked out, providing an acceptable accuracy of electrical and temperature effects accounting for practical applications in the temperature range from room temperature to 200°C.

Keywords

field-effect transistors, MOSFETs, JFETs, temperature influence, extreme operating conditions, compact spice models, model parameter extraction

Library reference

Petrosyants K.O., Ismail-zade M.R., Sambursky L.M., Kharitonov I.A. SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 3. P. 111-117. doi:10.31114/2078-7707-2018-3-111-117

URL of paper

http://www.mes-conference.ru/data/year2018/pdf/D137.pdf