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Femtosecond Laser System for VLSI Heavy Ion Induced Single Event Effects Hardness Testing
Authors
	Mavritskiy O.B.
	Egorov A.N.
	Pechenkin A.A.
	Savchenkov D.V.
	Telets V.A.
Date of publication
	2014
Abstract
	The characteristics of a unique facility based on femtosecond laser with variable pulse duration for Single Event Effects testing of microelectronic devices are presented. The influence of laser pulse duration on the results of the threshold energy estimation ​​is experimentally confirmed.
Keywords
	femtosecond laser; Single Event Effects; pulse duration
Library reference
	Mavritskiy O.B., Egorov A.N., Pechenkin A.A., Savchenkov D.V., Telets V.A. Femtosecond Laser System for VLSI Heavy Ion Induced Single Event Effects Hardness Testing // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 177-180.
URL of paper
	http://www.mes-conference.ru/data/year2014/pdf/D097.pdf