| Development of methods for the analysis of defects in the gate dielectric on the test structures in the wafers |
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| Authors |
| | Sivchenko A.S. |
| Date of publication |
| | 2014 |
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| Abstract |
| | The article presents a method of determining defects in the gate dielectric MOSFETs. The basis of the proposed method is specially designed test structures, measurement algorithm Test structures to determine and control of defects, as well as automated measurement program makes possible the inspection of defects in automatic mode |
| Keywords |
| | Defectiveness of the gate dielectric MOSFETs, reliability, control of process parameters,WLR,TDDB |
| Library reference |
| | Sivchenko A.S. Development of methods for the analysis of defects in the gate dielectric on the test structures in the wafers // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 145-150. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D051.pdf |
