| SPICE-model of SiGe HBT taking into account the aging effects |
|
 |
|
|
| Authors |
| | Kozhukhov M.V. |
| | Mukhametdinova A.R. |
| Date of publication |
| | 2021 |
| DOI |
| | 10.31114/2078-7707-2021-4-81-85 |
|
| Abstract |
| | A SPICE macromodel of the SiGe HBTs taking into account aging effects is presented. It consists of the standard core model selected by the designer and an additional subcircuit taking into account the hot-carrier effects. The macromodel was included on SPICE-like simulators. The advantages of SPICE-model version of SiGe HBT are high accuracy of description for device characteristics, convenience to use for IC designers and simplicity of parameter determination. |
| Keywords |
| | SPICE, simulation, heterojunction bipolar transistors (HBTs), aging, reliability, hot-carrier degradation. |
| Library reference |
| | Kozhukhov M.V., Mukhametdinova A.R. SPICE-model of SiGe HBT taking into account the aging effects // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 4. P. 81-85. doi:10.31114/2078-7707-2021-4-81-85 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2021/pdf/D079.pdf |
