| Estimation of single event effect sensitivity in VLSI to neutron irradiation |
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| Authors |
| | Chumakov A.I. |
| Date of publication |
| | 2020 |
| DOI |
| | 10.31114/2078-7707-2020-2-153-157 |
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| Abstract |
| | The simple analytical model for estimating the single event effect (SEE) cross sections in VLSI under the influence of fast neutron irradiation is presented. The model is based on the assessment that the total energy of heavy secondary nuclear particles is absorbed in a sensitive volume of VLSI element. Energy losses from primary knocked-out silicon atoms from elastic and inelastic scattering is the main mechanism inducing SEE in deep submicron VLSI. For VLSI with a relative large threshold energy (>2 MeV) it is necessary to take into account the energy losses from a magnesium atoms. In a simplified version of the model for conservative estimates, it is proposed to consider only these processes.
Based on these assumptions, typical dependences of SEE cross-sections as a function of neutron energy are obtained. The obtained results allow to estimate SEE rate in VLSI under the influence of fast neutrons with an arbitrary spectrum relatively easy.
The predicted results correlate with experimental data, but as a rule they give a conservative estimation. These results are explained the following main reasons: inaccurate prediction of the values of sensitive volume and threshold energy, usage an assumption of the complete energy absorption in the sensitive volume, ignoring geometrically factors and so on. Nevertheless, the relative simplicity of the proposed model, which uses only two independent parameters, allows it to be used to predict the radiation hardness under fast neutron irradiation. |
| Keywords |
| | Single event effects, fast neutron irradiation, energy losses in sensitive volume. |
| Library reference |
| | Chumakov A.I. Estimation of single event effect sensitivity in VLSI to neutron irradiation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 2. P. 153-157. doi:10.31114/2078-7707-2020-2-153-157 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2020/pdf/D042.pdf |
