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Development monolitic integrated SiGe HBT reciver for 57-64 GHz application
Authors
	Koptsev D.A.
	Dmitriev V.A.
Date of publication
	2014
Abstract
	This paper considers the structure of receiver path for frequency band 57-64 GHz. It presents two receiver building blocks for 60 GHz WLAN application: a LNA and a down-conversation mixer with single-ended inputs and outputs. The circuits have been designed utilizing an 0,25 μm SiGe:C BiCMOS technology, featuring npn HBTs transistors with fT = 190 GHz and fMAX = 190 GHz. A four stage architecture has been chosen for LNA implementation. LNA has a power gain of 21 dB and a noise figure of 7.1 dB in considered frequency range. The circuit of LNA consumes 12.5 mA from a 1.5 V supply. Grounded CPW transmission lines has been used for the impedance matching. For calculation CPW lines has been performed 3-D planar electromagnetic simulation. Down-conversation mixer core contains differential Gilbert cell and built-in active baluns. The mixer has a conversion gain of 15.3 dB and a noise figure of 16.1 dB. Also the mixer circuits contains IF amplifier and notch filter based on CPW lines λ/4 length. The circuit of down-conversation mixer consumes 52 mA from a 2 V supply. The LNA chip consumes 0.42 mm2 with bond-pads and the down-conversation mixer consumes 0.6 mm2 with bond-pads.
Keywords
	LNA, mixer, 60 GHz, SiGe, CPW, BiCMOS, receiver
Library reference
	Koptsev D.A., Dmitriev V.A. Development monolitic integrated SiGe HBT reciver for 57-64 GHz application // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 85-88.
URL of paper
	http://www.mes-conference.ru/data/year2014/pdf/D136.pdf