Design of basic blocks for millimeter wave receiver in CMOS 90 nm

Tikhonov, S.A.; Mavrichev, A.V.; Artemenko, A.A.; Maltsev, A.A.

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Authors

Date of publication

2014

Abstract

This paper presents results of the development of basic blocks for millimeter wave receiver operating in the 57-64 GHz range. Designed receiver blocks are based on CMOS 90 nm process and include a low-noise ampifier (LNA), a direct down-conversion mixer and a frequency multiplier dedicated for use in LO generation chain. Development and simulations of the described functional blocks were performed in Cadence IC using process design kit provided by Taiwan Semiconductor Manufacturing Company (TSMC). Electromagnetic simulations of distributed passive elements, namely, a transmission line, a planar inductor and a balun were performed in CST Microwave Studio. This paper also presents measurement results of main characteristics of the manufactured ICs carried out by the vector network analyzer Rohde & Schwarz ZVA67 and the probe station Cascade Microtech EPS150MMW. Designed basic functional blocks can be used in millimeter wave radio front-end of the complete receiver.

Keywords

CMOS, millimeter wave range, low-noise amplifier, mixer, frequency doubler, transmission line, planar inductor, balun

Library reference

Tikhonov S.A., Mavrichev A.V., Artemenko A.A., Maltsev A.A. Design of basic blocks for millimeter wave receiver in CMOS 90 nm // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 57-62.

URL of paper

http://www.mes-conference.ru/data/year2014/pdf/D084.pdf