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Designing and simulation of the differential capacitive MEMS accelerometer main parameters
Authors
	Saikin D.A.
	Godovitsyn I.V.
	Fedorov R.A.
	Amelichev V.V.
Date of publication
	2010
Abstract
	Main parameters of the differential capacitive MEMS accelerometer test structure are calculated with analytical relations and finite-element modeling. The technology for manufacturing MEMS accelerometer with the use of SOI wafers is developed and experimental samples are fabricated. Main parameters of MEMS accelerometer test structure were measured, demonstrating good agreement with calculated values.
Keywords
	MEMS, SOI, accelerometer
Library reference
	Saikin D.A., Godovitsyn I.V., Fedorov R.A., Amelichev V.V. Designing and simulation of the differential capacitive MEMS accelerometer main parameters // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 642-647.
URL of paper
	http://www.mes-conference.ru/data/year2010/papers/m10-157-90361.pdf