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| Synthesis of topology of standard CMOS cells taking into account effect of electromigration |
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| Authors |
| | Rozenfeld V.P. |
| | Zinchenko L.A. |
| | Mazias R.L. |
| | Smirnov Yu.G. |
| | Somov S.V. |
| | Topuzov I.G. |
| Date of publication |
| | 2008 |
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| Abstract |
| | Methods of synthesis of topology of standard CMOS of the cells proof to consequences of effect of electromigration are offered. The fast method
of valuation of average density of a current in line is offered.
It is considered topology and a cell electric circuit. The criteria, allowing to compare variants of trace of a cell from the point of view of their electromigratory firmness are offered. Optimization methods of topology of a cell by criterion of electromigratory firmness of the explorers forming the output cascade are considered. |
| Keywords |
| | layout synthesis of CMOS, electromigration |
| Library reference |
| | Rozenfeld V.P., Zinchenko L.A., Mazias R.L., Smirnov Yu.G., Somov S.V., Topuzov I.G. Synthesis of topology of standard CMOS cells taking into account effect of electromigration // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 120-125. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2008/18.pdf |
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