| Peculiarities of Appearance and Registration of the Latchup in CMOS VLSI under Uniform Pulsed Laser Irradiation |
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| Authors |
| | Shvetsov-Shilovskiy I.I. |
| Date of publication |
| | 2021 |
| DOI |
| | 10.31114/2078-7707-2021-4-176-181 |
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| Abstract |
| | The paper concerns the influence of the temperature and the supply voltage on peculiarities of the latchup appearance in CMOS VLSI under uniform pulsed laser irradiation. Nonstable latchup registration methods are proposed and discussed.
The latchup in CMOS VLSI is the subject of careful research in the analysis of the radiation behavior of ICs, since it is often the criterion for the radiation hardness of the single device and equipment. If the holding voltage of the latchup structure is close to the supply voltage of the IC, latchup can spontaneously disable itself without turning off the power supply, so the latchup appears to be unstable.
CMOS SRAMs were selected as devices under test as they feature uniform topology, i.e., the storage area. It allows a simple way to analyze the nonstable latchup effect, because the increase in laser beam size leads to increase in voltage drop and can cause the latchup to disable itself.
The experimental results are presented on the dependance of minimum laser intensity that is needed to initiate the latchup on the temperature and supply voltage. In the selected device under certain conditions the latchup arises only in the limited range of the laser intensity and supply voltage.
It is shown that providing non-uniform pulsed laser irradiation it is possible to observe stable latchup in CMOS IC even if there is no latchup registered under uniform laser irradiation. Moreover, the range of conditions where the stable latchup is observed decreases when increasing the laser beam size. Noticeable results on the localization of the latchup under uniform laser irradiation are presented. |
| Keywords |
| | CMOS VLSI, nonstable latchup, uniform pulsed laser irradiation. |
| Library reference |
| | Shvetsov-Shilovskiy I.I. Peculiarities of Appearance and Registration of the Latchup in CMOS VLSI under Uniform Pulsed Laser Irradiation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 4. P. 176-181. doi:10.31114/2078-7707-2021-4-176-181 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2021/pdf/D072.pdf |
