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GaAs MIC X-band low noise amplifier
Authors
	Kudabay E.S.
	Salikh Ayatulla
	Moseychuk V.A.
	Bragin D.S.
Date of publication
	2021
DOI
	10.31114/2078-7707-2021-3-166-170
Abstract
	When developing active phased antenna arrays (APAA), the choice of a low noise amplifier (LNA) is of great importance. The aim of this work was to design a monolithic integrated circuit (MIC) LNA X range (7-13 GHz) based on the technology of gallium arsenide (GaAs) transistor with increased electron mobility (pHEMT) for use in APAA. When developing the LNA MIC, a library of elements based on the GaAs pHEMT 0.15 μm technological route in AWR Microwave Office CAD was used. The developed amplifier is based on common-source transistors with serial negative feedback (NFB) in the form of a high-impedance transmission line segment, as well as with parallel NFB to match the noise figure and power gain (CPM) in accordance with the combined matching technique. As a result of the work, it was possible to design an LNA MIC with gains of at least 20 dB. The noise figure of the amplifier was 1.5 dB, the reflection coefficient from the input and output was no more than -15 dB. The final dimensions of the MIC topology were 2.55x1.55 mm2.
Keywords
	gallium arsenide (GaAs), HEMT, LNA, X-band, microwave MIC, noise figure, combined matching method.
Library reference
	Kudabay E.S., Salikh Ayatulla, Moseychuk V.A., Bragin D.S. GaAs MIC X-band low noise amplifier // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 3. P. 166-170. doi:10.31114/2078-7707-2021-3-166-170
URL of paper
	http://www.mes-conference.ru/data/year2021/pdf/D030.pdf