| S-band power amplifiers based on GaN transistors of JSC «ICC Milandr» |
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| Authors |
| | Tarasov S.V. |
| | Polunin M.M. |
| | Kolesnikov D.V. |
| | Glushkov G.I. |
| | Bormontov E.N. |
| Date of publication |
| | 2021 |
| DOI |
| | 10.31114/2078-7707-2021-3-190-194 |
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| Abstract |
| | Article presents the results of development of continuous mode power amplifiers with 50 V operating supply voltage based on microwave nitride of gallium transistors of JSC «ICC Milandr». The obtained results confirm that the developed transistors and power amplifiers based on them are not inferior to imported analogues, and can be offered to domestic companies and manufacturers of electronic equipment as part of import substitution. The results of measurements of power amplifiers in continuous mode at frequency 3.1 GHz are given. |
| Keywords |
| | gallium nitride, UHF transistor, CW-mode, power amplifier for S-band. |
| Library reference |
| | Tarasov S.V., Polunin M.M., Kolesnikov D.V., Glushkov G.I., Bormontov E.N. S-band power amplifiers based on GaN transistors of JSC «ICC Milandr» // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2021. Issue 3. P. 190-194. doi:10.31114/2078-7707-2021-3-190-194 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2021/pdf/D038.pdf |
