| Model for detecting counterfeit recovered SRAM based on accelerated aging |
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| Authors |
| | Starcev V.N. |
| | Semenov A.V. |
| Date of publication |
| | 2020 |
| DOI |
| | 10.31114/2078-7707-2020-4-225-230 |
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| Abstract |
| | We considered new model for detecting recovered SRAM based on accelerated aging. The problem of detecting counterfeit recovered IC is difficult. A priori information required for decision making is not always available. Full reliability tests are lengthy and expensive. We studied the degradation model for SRAM. We have shown that using the SRAM degradation model based on NBTI allows us to get a rule for detecting restored chip. We have shown that accelerated aging methods for SRAM have a stable effect on the rate of change in the parameters of statistical distributions. The proposed model applied not only for SRAM. The model is also applicable for others integrated circuits (microcontrollers, FPGAs). At the same time, the required duration of stress effects can be calculated experimentally for various types of products. |
| Keywords |
| | counterfeiting, accelerated aging, NBTI, SRAM. |
| Library reference |
| | Starcev V.N., Semenov A.V. Model for detecting counterfeit recovered SRAM based on accelerated aging // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 4. P. 225-230. doi:10.31114/2078-7707-2020-4-225-230 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2020/pdf/D120.pdf |
