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Petrosyants K.O.

Moscow State Institute of Electronics and Mathematics (Technical University)

Listing of all the works of the author. Click on the work title to get the full information.

2005
		Petrosyants K.O., Ryabov N.I., Kazakov V.I., Makeev V.V., Rusakov D.N., Chirkin G.K. Simulation of transistor structures of power electronics
		Chernyj A.I., Bogatyrev V.N., Povarnitsyna Z.M., Petrosyants K.O., Kharitonov I.A., Karelin A.A. Design and development of SOI CMOS OA
2006
		Petrosyants K.O., Kozynko P.A. Enhancing subsystem for thermal simulation of PCB in Mentor Graphics EDA
		Petrosyants K.O., Shirabajkin D.B. Mathematical simulation of electromigratory faulures of interlayer connection of VLSI
		Petrosyants K.O., Torgovnikov R.A. The comparative analysis of circuit simulation models of SiGe heterojunction transistor
2008
		Kharitonov I.A., Petrosyants K.O., Orekhov E.V., Yatmanov A.P., Sambursky L.M. Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects
		Petrosyants K.O., Torgovnikov R.A. Features of simulation of SiGe:C heterojunction bipolar transistor
		Petrosyants K.O. Thermal simulation of MES components: from submicronic VLSI elements up to complex electronic blocks
		Petrosyants K.O., Ryabov N.I., Kharitonov I.A., Kozynko P.A. Electro-thermal simulation process implementation in Mentor Graphics IC Station
2010
		Petrosyants K.O., Ryabov N.I. Temperature sensors modeling for smart power ICs
2012
		Petrosyants K.O., Kharitonov I.A., Orekhov E.V., Sambursky L.M., Yatmanov A.P., Voevodin A.V. Investigation of single event upset reliability for SOI CMOS SRAM cells using mixed-mode 3D TCAD-SPICE simulation
		Petrosyants K.O., Kharitonov I.A., Adonin A.S., Sidorov A.V., Aleksandrov A.V. Digital circuit IBIS-models generation with account for temperature and radiation
		Gryaznov E.G., Mansurov A.N., Petrosyants K.O. Radiation hardened EEPROM structures integrated with SOI CMOS techology
2016
		Petrosyants K.O., Kozhukhov M.V. Si BJT and SiGe HBT TCAD simulation taking into account radiation effects
2018
		Petrosyants K.O., Ismail-zade M.R., Sambursky L.M., Kharitonov I.A. SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C
2020
		Petrosyants K.O., Kharitonov I.A. An improved procedure for electro-thermal simulation of the characteristics of Bi-CMOS-DMOS IC output stages
		Petrosyants K.O., Popov D.A., Ismail-zade M.R., Sambursky L.M., Bo Li, Wang Y.C. TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures
2021
		Petrosyants K.O., Silkin D.S., Popov D.A. Comparison of MOSFET and FinFET thermal characteristics