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Balashov A.G.

MIET

Listing of all the works of the author. Click on the work title to get the full information.

2005 
  Balashov A.G., Krupkina T.Yu., Tsimbalov A.S.
Criteria of a choice of models at calculation of device characteristics of submicronic transistor structures
2016 
  Chaplygin Yu.A., Balashov A.G., Evdokimov V., Klyuchnikov A.S.
Research of the RF performance of SiGe HBT during transition towards sub-100 nm technology limits
 

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