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Balashov A.G.
MIET
Listing of all the works of the author. Click on the work title to get the full information.
2005
Balashov A.G., Krupkina T.Yu., Tsimbalov A.S.
Criteria of a choice of models at calculation of device characteristics of submicronic transistor structures
2016
Chaplygin Yu.A., Balashov A.G., Evdokimov V., Klyuchnikov A.S.
Research of the RF performance of SiGe HBT during transition towards sub-100 nm technology limits
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