| High-Voltage Silicon Diode Simulation, the Dependences of Its Current Density from Temperature Construction |
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| Authors |
| | Lagunovich N.L. |
| Date of publication |
| | 2020 |
| DOI |
| | 10.31114/2078-7707-2020-2-22-28 |
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| Abstract |
| | The aim of this work was developing the manufacturing process route and one-dimensional model of the high-voltage silicon diode with breakdown voltage in the range from 120 V to 150 V. The technological simulation was performed and main parameters of the manufacturing process were defined with help of the program TSuprem4 which is part of Synopsys software package. The fundamental system of semiconductor equations is in the base of one-dimensional model developed by the author. This model is efficient in terms of machine time costs. The device modeling diode was completed by means of the program MOD-1D, which was developed by the author and uses the above-mentioned model, and the dependence of the diode current density on the forward bias voltage applied to the investigated device structure was constructed. The program MOD-1D was used to calculate and construct temperature dependences of the diode current density for different injection levels in the temperature range from 0 °C to 165 °C. It was determined that there is a more noticeable increase of the device current density with an p-n-junction temperature raising at low injection levels than at high injection levels. Thus, diode is more sensitive to temperature differences at low bias voltages applied to the device p-n junction than in the case of higher forward voltages applied to diode structure. The type 2D695 diode investigated in this work was manufactured in the production conditions of Open Join-Stock Company “INTEGRAL” – “INTEGRAL” Holding Managing Company according to the technological route developed by the author. |
| Keywords |
| | diode, forward voltage, process simulation, device simulation, current-voltage characteristic, temperature dependence, injection level. |
| Library reference |
| | Lagunovich N.L. High-Voltage Silicon Diode Simulation, the Dependences of Its Current Density from Temperature Construction // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 2. P. 22-28. doi:10.31114/2078-7707-2020-2-22-28 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2020/pdf/D065.pdf |
