Taking into Account the Simultaneous Effect of Low Temperatures and Penetrating Radiation on the Characteristics of the Bipolar and JFETs in the Circuit Simulation

Dvornikov, O.V.; Tchekhovski, V.A.; Prokopenko, N.N.; Galkin, Ya.D.; Kunts, A.V.

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Taking into Account the Simultaneous Effect of Low Temperatures and Penetrating Radiation on the Characteristics of the Bipolar and JFETs in the Circuit Simulation

Authors

Date of publication

2020

DOI

10.31114/2078-7707-2020-1-46-55

Abstract

The authors of the article consider the results of the papers on creation of the tools for simulating the effect of penetrating radiation and low temperatures, up to -200°C, on the current-voltage characteristics (CVC) of the BJTs and JFETs for LTspice CAD systems: the methods for conducting the studies of radiation and temperature changes in the CVCs, the methods for simultaneously taking into account the effects of low temperature and penetrating radiation in the LTspice, the methods for predicting the resistance of microcircuits to radiation defects, the modified combined transistor models, the radiation and low-temperature approximations of “Spice-parameters” of the JFETs.
The results of testing the proposed simulation tools for creating two libraries of parameters are presented: MH2XA030_25.03.20.lib for the elements of the bipolar-field array chip and CJFET_25.03.20.lib for various designs of the complementary JFETs.
In the MH2XA030_25.03.20.lib library, the penetrating radiation exposure is taken into account by using the combined models, the temperature dependences of the BJT are described by the averaged temperature coefficients, and the temperature change in the CVC of the JFET is considered with the help of the low-temperature approximation of the “Spice- parameter” BETA and the averaged temperature coefficient for the VTO.
In the library CJFET_25.03.20.lib, the effects of penetrating radiation and low temperatures are taken into account by applying the radiation and low-temperature approximations of the “Spice- parameters” BETA and VTO, and the effect of the neutron fluence is described on the basis of the experimental data for the fast electrons.
On the basis of the analysis of the experimental dependence of ID on VGS, it has been decided to create a separate set of the JFET model parameters for the drain current of less than 1 μA. The JFET CVC simulation results are compared with the measurements in the variation range of the drain current from tens of nA to hundreds of μA and temperatures from -200°C to 30°C. Adequacy of the models with the identified parameters sufficient for designing analog microcircuits has been established. The largest disagreement between the measurements and simulation is observed for the output CVC of the n-JFET at the drain currents less than 1 μA, which is explained by the imperfection of the used Shikhman–Hodges model. Thus, the identified parameters of the n-JFET model can be used only for the evaluative simulation of the CVC at the drain currents less than 1 μA.

Keywords

“Spice-models”, circuit simulation, radiation hardness, cryogenic electronics

Library reference

Dvornikov O.V., Tchekhovski V.A., Prokopenko N.N., Galkin Ya.D., Kunts A.V. Taking into Account the Simultaneous Effect of Low Temperatures and Penetrating Radiation on the Characteristics of the Bipolar and JFETs in the Circuit Simulation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 1. P. 46-55. doi:10.31114/2078-7707-2020-1-46-55

URL of paper

http://www.mes-conference.ru/data/year2020/pdf/D033.pdf