Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Design and investigation of the Hall element on 180 nm technology
Authors
	Prokofiev G.V.
	Popov A.D.
	Timofeev A.E.
	Kosolapov M.A.
	Arkhipov V.V.
Date of publication
	2020
DOI
	10.31114/2078-7707-2020-2-16-21
Abstract
	One of the main activities of LLC "IDM-PLUS" is development and production of position sensors and current sensors containing integrated sensitive elements [1]. Hall elements made on the basis of CMOS technology are compatible with processing scheme, have high reliability, small size, low cost of production, which ensures their wide application in various devices and modules [2]. In this work, we developed and investigated design of the magnetically sensitive Hall element with “pinch” area, based on XFAB XH018 HV CMOS technology. XH018 technology assumes the presence of epitaxial layer with a thickness of 10 μm and a slot trench insulation (STI) of 0.4 μm. To form the active region of the sensor, we used a DNWELL n-type conductivity layer with a depth of Xj = 2.8 μm and surface resistance (under the gap insulation layer) Rs = 1.5 kΩ/[]. To reduce the effective thickness of the active region, a “pinch” PWELL1 layer was introduced into the sensor design with a transition depth of Xj = 1 μm and Rs = 2.9 kΩ/[]. To preliminarily determine electrical and magnetic characteristics of the Hall element, device modeling of three-dimensional structure of the sensor in TCAD was performed. The experimental measurements were carried out on two test samples in a package without shells, boiled on a board. Since active region of the sensor is based on a diffusion pocket in the epitaxial layer, temperature dependence of the sensor resistance is close to the diffusion resistor, the sensor resistance changes approximately 3 times from 5.5 kΩ to 15.5 kΩ in the temperature range -60 + 125 °C. The magnitude of the bias voltage of the Hall sensor is an important parameter and determines the magnitude of the error in measuring the magnitude of the magnetic induction. In the developed Hall sensor, the bias voltage does not exceed 3 mV in the temperature range -60 + 125 °C and a current of 250 μA. The dependence of bias voltage on the current is close to linear. The relative current sensitivity of the sensor at a temperature of 25 °C lies in range 260 -280 V/(A*T) depending on bias current. The dependence of sensitivity on current is close to linear. This paper describes the behavioral model of the Hall sensor obtained from experimental results. The equivalent circuit of the model consists of four resistors included in the bridge circuit and four voltage sources that emulate the Hall voltage.
Keywords
	Hall element, magnetosensitivity, position sensors, Verilog-A model, TCAD.
Library reference
	Prokofiev G.V., Popov A.D., Timofeev A.E., Kosolapov M.A., Arkhipov V.V. Design and investigation of the Hall element on 180 nm technology // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2020. Issue 2. P. 16-21. doi:10.31114/2078-7707-2020-2-16-21
URL of paper
	http://www.mes-conference.ru/data/year2020/pdf/D017.pdf